Multichannel high‑temp reverse bias (HTRB) MOSFET testing: dev & validation

Registration now open

The reliability of SiC power devices is a critical factor in determining performance and predicting failure timelines, particularly under high temperature and high voltage operating conditions. The National Physical Laboratory (NPL) and Swansea University have jointly developed and standardised multichannel high temperature reverse bias (HTRB) test systems capable of parallel testing at up to 1500 V under elevated temperature reversed bias conditions. An inter laboratory collaboration is underway to compare these test methodologies and to identify any performance differences arising from system design or operating approaches. Using a mutually agreed testing protocol, we have conducted high temperature accelerated ageing studies to ensure consistency, reproducibility, and comparability across partners. In this webinar, we will present a detailed comparison of the test systems and share compelling time to failure results obtained from these accelerated ageing experiments.

Speakers:
Dhaval Vankhade, Higher Scientist, NPL
Martin Wickham, Senior Scientist, NPL
Mohammad Monfared, Senior Lecturer in the Department of Electronic and Electrical Engineering, Swansea University